december 2013 fqa8n90c_f109 n-channel qfet ? mosfet ?2007 fairchild semiconductor corporation fqa8n90c_f109 rev c1 www.fairchildsemi.com 1 fqa8n90c_f109 n-channel qfet ? mosfet 900 v, 8 a, 1.9 ? features description this n-channel enhancement mode power mosfet is produced using fairchild semiconductors proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, active power factor correction (pfc), and electronic lamp ballasts. absolute maximum ratings t c = 25c unless otherwise noted . to-3pn g d s g s d ? 8 a, 900 v, r ds(on) = 1.9 ? (max.) @ v gs = 10 v, i d = 4 v ? low gate c harge (typ. 35 nc) ? low crss ( ty p . 12 pf) ? 100% a valanche tested ? rohs compliant thermal characteristics symbol parameter fqa8n90c_f109 unit v dss drain-source voltage 900 v i d drain current 8.0 a - continuous (t c = 25c) - continuous (t c = 100c) 5.1 a i dm drain current - pulsed (note 1) 32 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 850 mj i ar avalanche current (note 1) 8.0 a e ar repetitive avalanche energy (note 1) 24 mj dv/dt peak diode recovery dv/dt (note 3) 4.0 v/ns p d power dissipation (t c = 25c) 240 w - derate above 25c 1.92 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter fqa8n90c_f109 unit r jc thermal resistance, junction-to- case , max. 0.52 c /w r cs thermal resistance, case-to- sink , typ. 0.24 c /w r ja thermal resistance, junction-to- ambient , max. 40 c /w
www.fairchildsemi.com 2 fqa8n90c_f109 n-channel qfet ? mosfet ?2007 fairchild semiconductor corporation fqa8n90c_f109 rev c1 part number top mark package packing method reel size tape width quantity to-3pn tube n/a n/a 30 units package marking and ordering information electrical characteristics t c = 25c unless otherwise noted . n otes : 1. repetitive rating: pulse-width limit ed by maximum j unction te mperature. 2. l = 25 mh, i as = 8 a, v dd = 50 v, r g = 25 , s tarting t j = 25c. 3. i sd 8 a, di/dt 2 00 a/s, v dd bv dss , s tarting t j = 25 c. 4. essentiall y independent of op erating temperatur e typical characteristics. fqa8n90c_f109 fqa8n90c symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 900 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.95 -- v/c i dss zero gate voltage drain current v ds = 900 v, v gs = 0 v -- -- 10 a v ds = 720 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a3 . 0- -5 . 0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.0 a -- 1.6 1.9 ? g fs forward transconductance v ds = 50 v, i d = 4.0 a -- 5.5 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1600 2080 pf c oss output capacitance -- 130 170 pf c rss reverse transfer capacitance -- 12 15 pf switching characteristics t d(on) turn-on delay time v dd = 450 v, i d = 11.0a, r g = 25 ? (note 4) -- 40 90 ns t r turn-on rise time -- 110 230 ns t d(off) turn-off delay time -- 70 150 ns t f turn-off fall time -- 70 150 ns q g total gate charge v ds = 720 v, i d = 11.0a, v gs = 10 v (note 4) -- 35 45 nc q gs gate-source charge -- 10 -- nc q gd gate-drain charge -- 14 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 8.0 a i sm maximum pulsed drain-source diode forward current -- -- 32.0 a v sd drain-source diode forward voltage v gs = 0 v, i s = 8.0 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 8.0 a, di f / dt = 100 a/ s -- 530 -- ns q rr reverse recovery charge -- 5.8 -- c
www.fairchildsemi.com 3 fqa8n90c_f109 n-channel qfet ? mosfet ?2007 fairchild semiconductor corporation fqa8n90c_f109 rev c1 typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 -1 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v ? notes : 1. 250 s pulse test 2. t c = 25 ? i d , drain current [a] 10 v ds , drain-source voltage [v] 2 2 81 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c ? notes : 1. v ds = 50v 2. 250 s pulse test i d , drain current [a] 46 v gs , gate-source voltage [ v] 0 5 10 15 20 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 20v v gs = 10v ? note : t j = 25 ? r ds(on) [? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 ? ? notes : 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 0 10 1 0 500 1000 1500 2000 2500 3000 c iss = c gs + c gd (c ds = shorted) c rs os s s = c gd ds c = c + c gd ? notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] 10 v ds , drain-source voltage [v] 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 v ds = 450v v ds = 180v v ds = 720v ? note : i d = 8a v gs , gate-source voltage [v] q g , total gate charge [nc]
www.fairchildsemi.com 4 fqa8n90c_f109 n-channel qfet ? mosfet ?2007 fairchild semiconductor corporation fqa8n90c_f109 rev c1 typical performance characteristics (continued) z j c (t), thermal response [ o c/w] figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature t j , junction temperature [ o c] figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature v ds , drain-source voltage [v] figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ? notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? notes : 1. v gs = 10 v 2. i d = 4.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) ? notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ ? ] 10 5- 10 4- 10 3- 10 -2 10 1- 10 0 10 1 10 2- 10 -1 10 0 ? n otes : 1. z (t) = 0.52 ? /w m ax. 2. d u jc ty factor, d =t 1 /t 2 3. t jm - t c = * p dm z jc (t) sing le p ulse d=0.5 0.02 0.2 0.05 0.1 0.01 t 1 , s quare w ave p ulse d uration [sec] t 1 p dm t 2
www.fairchildsemi.com 5 fqa8n90c_f109 n-channel qfet ? mosfet ?2007 fairchild semiconductor corporation fqa8n90c_f109 rev c1 figure 12. gate charge test circuit & waveform f igure 13 . resistive switc hing test circuit & waveforms figure 14 . unclamped inductive switching test circuit & waveforms vv gsgs vv dsds 1010%% 90%90% tt d(d(onon)) tt rr tt onon tt ofofff tt d(d(ooffff)) tt ff vv dddd vv dsds rr ll dudutt rr gg vv gsgs chacharrgege vv gsgs 10v10v qq gg qq gsgs qq gdgd vv gsgs dudutt vv dsds 300n300nff 50k50k ? 200n200nff 12v12v samsamee ttyypepe as as dudutt === eee asasas -------- 2 1 2 1 2 1 2 1 -------- lll asasas iii bvbv dssdss 222 -------------------- -------------------- bvbv dsdsss -v-v dddd vv dddd vv dsds bvbv dsdsss t t pp vv dddd ii asas vv ds ds (t)(t) ii d d (t)(t) titimmee dutdut rr gg lll iii ddd t t pp vv gsgs vv gsgs i g = const.
www.fairchildsemi.com 6 figure 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- fqa8n90c_f109 n-channel qfet ? mosfet ?2007 fairchild semiconductor corporation fqa8n90c_f109 rev c1
www.fairchildsemi.com 7 fqa8n90c_f109 n-channel qfet ? mosfet ?2007 fairchild semiconductor corporation fqa8n90c_f109 rev c1 mechanical dimensions figure 16 . to3, 3-lead, plastic, eiaj sc-65 package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt3p0-003
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voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporations anti-counterfeiting policy. fairchilds anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourage s customers to purchase fairchild parts either directly from fairchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair childs quality standards for handing and storage and provide access to fairchilds full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i66 tm ? fqa8n90c_f109 n-channel qfet ? mosfet obsolete ?2007 fairchild semiconductor corporation fqa8n90c_f109 rev c1
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